FDC5614

FDC5614P vs FDC5614 vs FDC5614P , 1N4756ATA

 
PartNumberFDC5614PFDC5614FDC5614P , 1N4756ATA
DescriptionMOSFET SSOT-6 P-CH
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSSOT-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance105 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.6 W--
ConfigurationSingleSingle Quad Drain-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC5614P--
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min8 S--
Fall Time10 ns10 ns-
Product TypeMOSFET--
Rise Time10 ns10 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time7 ns7 ns-
Part # AliasesFDC5614P_NL--
Unit Weight0.001058 oz0.001270 oz-
Part Aliases-FDC5614P_NL-
Package Case-SSOT-6-
Pd Power Dissipation-1.6 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-3 A-
Vds Drain Source Breakdown Voltage-- 60 V-
Rds On Drain Source Resistance-105 mOhms-
Forward Transconductance Min-8 S-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC5614P MOSFET SSOT-6 P-CH
FDC5614 全新原裝
FDC5614P , 1N4756ATA 全新原裝
FDC5614P D1KD 全新原裝
FDC5614P-1 全新原裝
FDC5614P-NL 全新原裝
FDC5614P/ 全新原裝
FDC5614P-CUT TAPE 全新原裝
FDC5614P-- 全新原裝
ON Semiconductor
ON Semiconductor
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