FDC6312

FDC6312P vs FDC6312 vs FDC6312C

 
PartNumberFDC6312PFDC6312FDC6312C
DescriptionMOSFET SSOT-6 P-CH DUAL
ManufacturerON SemiconductorFSC-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance115 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation960 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC6312P--
Transistor Type2 P-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.3 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesFDC6312P_NL--
Unit Weight0.001058 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC6312P MOSFET SSOT-6 P-CH DUAL
FDC6312 全新原裝
FDC6312C 全新原裝
FDC6312P , 1N4763A 全新原裝
FDC6312P-NL 全新原裝
FDC6312P-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
FDC6312P MOSFET 2P-CH 20V 2.3A SSOT-6
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