FDC6322C

FDC6322C vs FDC6322C , 1N485B vs FDC6322C-NL

 
PartNumberFDC6322CFDC6322C , 1N485BFDC6322C-NL
DescriptionMOSFET SSOT-6 COMP N-P-CH
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current220 mA, 460 mA--
Rds On Drain Source Resistance5 Ohms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel, 1 P-Channel--
TypeFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.2 S, 0.8 S--
Fall Time4.5 ns, 8 ns--
Product TypeMOSFET--
Rise Time4.5 ns, 8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4 ns, 55 ns--
Typical Turn On Delay Time5 ns, 7 ns--
Part # AliasesFDC6322C_NL--
Unit Weight0.000557 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC6322C MOSFET SSOT-6 COMP N-P-CH
ON Semiconductor
ON Semiconductor
FDC6322C MOSFET N/P-CH 25V SSOT-6
FDC6322C , 1N485B 全新原裝
FDC6322C-NL 全新原裝
FDC6322CFSC 全新原裝
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