FDC638P

FDC638P vs FDC638P / 638 vs FDC638P-CUT TAPE

 
PartNumberFDC638PFDC638P / 638FDC638P-CUT TAPE
DescriptionMOSFET SSOT-6 P-CH -20V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance48 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC638P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min15 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFDC638P_NL--
Unit Weight0.001058 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC638P MOSFET SSOT-6 P-CH -20V
ON Semiconductor
ON Semiconductor
FDC638P 全新原裝
FDC638P / 638 全新原裝
FDC638P-NL 全新原裝
FDC638P_G Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R (Alt: FDC638P-G)
FDC638P_NL , 1N4937E3/23 全新原裝
FDC638P_SBAD006A 全新原裝
FDC638P-CUT TAPE 全新原裝
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