 |  | | |
| PartNumber | FDC6401N | FDC640 | FDC6401 |
| Description | MOSFET Dual N-Ch 2.5V Spec Power Trench | ||
| Manufacturer | ON Semiconductor | FAIRCHILD | ON |
| Product Category | MOSFET | IC Chips | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SSOT-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 70 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 960 mW | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDC6401N | - | PowerTrenchR |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Type | MOSFET | - | - |
| Width | 1.6 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 7 ns | - | 7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | 7 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | 13 ns |
| Typical Turn On Delay Time | 5 ns | - | 5 ns |
| Part # Aliases | FDC6401N_NL | - | - |
| Unit Weight | 0.001270 oz | - | 0.001270 oz |
| Part Aliases | - | - | FDC6401N_NL |
| Package Case | - | - | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SuperSOT-6 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 700mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 324pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 3A |
| Rds On Max Id Vgs | - | - | 70 mOhm @ 3A, 4.5V |
| Vgs th Max Id | - | - | 1.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 4.6nC @ 4.5V |
| Pd Power Dissipation | - | - | 960 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 3 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 70 mOhms |
| Forward Transconductance Min | - | - | 10 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDC6401N | MOSFET Dual N-Ch 2.5V Spec Power Trench | |
| FDC640P | MOSFET SSOT-6 P-CH -20V | ||
| FDC640 | 全新原裝 | ||
| FDC6401 | 全新原裝 | ||
| FDC6401N-NL | 全新原裝 | ||
| FDC640P(Q) | 全新原裝 | ||
| FDC640P-NL | 全新原裝 | ||
| FDC640P_NL , 1N4937G-A2 | 全新原裝 | ||
| FDC6401N-CUT TAPE | 全新原裝 | ||
ON Semiconductor |
FDC6401N | MOSFET 2N-CH 20V 3A SSOT-6 | |
| FDC640P | MOSFET P-CH 20V 4.5A SSOT-6 | ||
| FDC640P_F095 | MOSFET P-CH 20V 4.5A 6-SSOT |