PartNumber | FDC642P-F085P | FDC642P-F085 | FDC642P-F095 |
Description | MOSFET P-ChannelPowerMosfet | MOSFET P-CHANNEL 2.5V PowerTrench MOS | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SuperSOT-6 | SSOT-6 | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor / Fairchild | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | FDC642P_F085P | FDC642P_F085 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | P-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 4 A | - |
Rds On Drain Source Resistance | - | 65 mOhms | - |
Vgs Gate Source Voltage | - | 8 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 1.6 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Tradename | - | PowerTrench | - |
Height | - | 1.1 mm | - |
Length | - | 2.9 mm | - |
Product | - | MOSFET Small Signal | - |
Series | - | FDC642P_F085 | - |
Transistor Type | - | 1 P-Channel | - |
Type | - | Power Trench MOSFET | - |
Width | - | 1.6 mm | - |
Forward Transconductance Min | - | 9 S | - |
Fall Time | - | 35 ns | - |
Rise Time | - | 19 ns | - |
Typical Turn Off Delay Time | - | 26 ns | - |
Typical Turn On Delay Time | - | 11 ns | - |
Unit Weight | - | 0.001270 oz | - |