FDC653N

FDC653N vs FDC653N , 1N5222B vs FDC653N-CUT TAPE

 
PartNumberFDC653NFDC653N , 1N5222BFDC653N-CUT TAPE
DescriptionMOSFET SSOT-6 N-CH 30V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC653N--
Transistor Type1 N-Channel--
TypeFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.2 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time7.5 ns--
Part # AliasesFDC653N_NL--
Unit Weight0.001058 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC653N MOSFET SSOT-6 N-CH 30V
ON Semiconductor
ON Semiconductor
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC653N , 1N5222B 全新原裝
FDC653N-F073 全新原裝
FDC653N-NL 全新原裝
FDC653N-CUT TAPE 全新原裝
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