 | | |
| PartNumber | FDC8886 | FDC8884 |
| Description | MOSFET SINGLE PT8 N 30/20V SSOT6 | MOSFET 30V N-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SSOT-6 | SSOT-6 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 6.5 A | 6.5 A |
| Rds On Drain Source Resistance | 36 mOhms | 23 mOhms |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.6 W | 800 mW |
| Tradename | PowerTrench | PowerTrench |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm |
| Series | FDC8886 | FDC8884 |
| Width | 1.6 mm | 1.6 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.001270 oz | 0.001270 oz |
| Number of Channels | - | 1 Channel |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Configuration | - | Single |
| Transistor Type | - | 1 N-Channel |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDC8886 | MOSFET SINGLE PT8 N 30/20V SSOT6 | |
| FDC8884 | MOSFET 30V N-Channel PowerTrench MOSFET | ||
ON Semiconductor |
FDC8886 | IGBT Transistors MOSFET Single PT8 N 30/20V in SSOT6 | |
| FDC8884 | MOSFET N-CH 30V 6.5A 6-SSOT | ||
| FDC8884-NL | 全新原裝 | ||
| FDC8886-NL | 全新原裝 |