FDG6306

FDG6306P vs FDG6306 vs FDG6306P-CUT TAPE

 
PartNumberFDG6306PFDG6306FDG6306P-CUT TAPE
DescriptionMOSFET P-Ch PowerTrench Specified 2.5V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current600 mA--
Rds On Drain Source Resistance420 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6306P--
Transistor Type2 P-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.8 S--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6 ns--
Typical Turn On Delay Time5.5 ns--
Part # AliasesFDG6306P_NL--
Unit Weight0.000988 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDG6306P MOSFET P-Ch PowerTrench Specified 2.5V
FDG6306 全新原裝
FDG6306P-NL 全新原裝
FDG6306P-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
FDG6306P 全新原裝
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