 |  | | |
| PartNumber | FDG6316P | FDG6316P , 1N5230BTR | FDG6316P-CUT TAPE |
| Description | MOSFET P-Ch PowerTrench Specified 1.8V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 700 mA | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDG6316P | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Part # Aliases | FDG6316P_NL | - | - |
| Unit Weight | 0.000988 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDG6316P | MOSFET P-Ch PowerTrench Specified 1.8V | |
ON Semiconductor |
FDG6316P | MOSFET 2P-CH 12V 0.7A SC70-6 | |
| FDG6316P , 1N5230BTR | 全新原裝 | ||
| FDG6316P-NL | 全新原裝 | ||
| FDG6316P/ | 全新原裝 | ||
| FDG6316P/16 | 全新原裝 | ||
| FDG6316P_T | 全新原裝 | ||
| FDG6316P-CUT TAPE | 全新原裝 |