FDI038

FDI038AN06A0 vs FDI038AN vs FDI038AN06A0_NL

 
PartNumberFDI038AN06A0FDI038ANFDI038AN06A0_NL
DescriptionMOSFET 60V 80a 0.0038 Ohms/VGS=10VPower Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance3.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation310 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
SeriesFDI038AN06A0--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time144 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesFDI038AN06A0_NL--
Unit Weight0.073511 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDI038AN06A0 MOSFET 60V 80a 0.0038 Ohms/VGS=10V
FDI038AN 全新原裝
FDI038AN06A0_NL Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
FDI038AN06AD 全新原裝
FDI038AN06AO 全新原裝
FDI038AN06AO 38N06 全新原裝
FDI038N06AO 全新原裝
ON Semiconductor
ON Semiconductor
FDI038AN06A0 MOSFET N-CH 60V 80A TO-262AB
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