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FDMC8884

FDMC8884-F126 vs FDMC8884 vs FDMC8884_F126

 
PartNumberFDMC8884-F126FDMC8884FDMC8884_F126
DescriptionMOSFET 30V N-CHAN 9A 19mOhmMOSFET 30V N-Channel Power TrenchIGBT Transistors MOSFET 30V N-CHAN 9A 19mOhm
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-33-8Power-33-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current9 A9 A-
Rds On Drain Source Resistance19 mOhms19 mOhms-
Qg Gate Charge5 nC, 10 nC5 nC, 10 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation18 W2.3 W-
ConfigurationSingleSingle-
PackagingReelReelReel
Height0.8 mm0.8 mm-
Length3.3 mm3.3 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.3 mm3.3 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesFDMC8884_F126--
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
Tradename-PowerTrench-
Series-FDMC8884-
Fall Time-2 ns-
Rise Time-2 ns-
Typical Turn Off Delay Time-15 ns-
Typical Turn On Delay Time-6 ns-
Unit Weight-0.007055 oz0.010582 oz
Package Case--MLP-8
Pd Power Dissipation--18 W
Id Continuous Drain Current--9 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--19 mOhms
Qg Gate Charge--5 nC 10 nC
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FDMC8884-F126 MOSFET 30V N-CHAN 9A 19mOhm
FDMC8884 MOSFET 30V N-Channel Power Trench
FDMC8884_F126 IGBT Transistors MOSFET 30V N-CHAN 9A 19mOhm
ON Semiconductor
ON Semiconductor 		FDMC8884 MOSFET N-CH 30V 9A POWER33
FDMC8884-F126 MOSFET N-CH 30V PWR33
FDMC8884 QFN8 全新原裝
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