 | | | |
| PartNumber | FDMS3660S | FDMS3662 | FDMS3660AS |
| Description | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | MOSFET 100V N-Channel PowerTrench | MOSFET COMPUTING MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Power-56-8 | Power-56-8 | Power-56-8 |
| Number of Channels | 2 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 100 V | 30 V |
| Id Continuous Drain Current | 13 A, 30 A | 8.9 A | 13 A |
| Rds On Drain Source Resistance | 8 mOhms, 1.8 mOhms | 14.8 mOhms | 11 mOhms |
| Vgs Gate Source Voltage | 20 V, 12 V | 20 V | 12 V, 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 155 C | + 150 C |
| Pd Power Dissipation | 2.2 W, 2.5 W | 2.5 W | 2.2 W, 2.5 W |
| Configuration | Dual | Single | Dual |
| Tradename | Power Stage PowerTrench | PowerTrench | Power Stage PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 6 mm | 6 mm | 6 mm |
| Series | FDMS3660S | FDMS3662 | FDMS3660AS |
| Transistor Type | 2 N-Channel | 1 N-Channel | 2 N-Channel |
| Width | 5 mm | 5 mm | 5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.006032 oz | 0.002402 oz | 0.006032 oz |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 6 ns | 3 ns, 5 ns |
| Rise Time | - | 15 ns | 3 ns, 5 ns |
| Typical Turn Off Delay Time | - | 32 ns | 21 ns, 38 ns |
| Typical Turn On Delay Time | - | 25 ns | 9 ns, 12 ns |
| Vgs th Gate Source Threshold Voltage | - | - | 1.5 V, 2 V |
| Qg Gate Charge | - | - | 21 nC, 64 nC |
| Forward Transconductance Min | - | - | 173 S, 240 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDMS3660S | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | |
| FDMS3664S | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | ||
| FDMS3669S | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | ||
| FDMS3662 | MOSFET 100V N-Channel PowerTrench | ||
| FDMS3660AS | MOSFET COMPUTING MOSFET | ||
| FDMS3668S | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | ||
ON Semiconductor |
FDMS3660AS | MOSFET 2N-CH 30V 13A/30A 8QFN | |
| FDMS3660S | MOSFET 2N-CH 30V 13A/30A 8-PQFN | ||
| FDMS3660S-F121 | MOSFET 2N-CH 30V 13A/30A 8-PQFN | ||
| FDMS3662 | MOSFET N-CH 100V 8.9A POWER56 | ||
| FDMS3664S | MOSFET 2N-CH 30V 13A/25A 8-PQFN | ||
| FDMS3668S | MOSFET 2N-CH 30V 13A/18A 8-PQFN | ||
| FDMS3669S | MOSFET 2N-CH 30V 13A/18A PWR56 | ||
| FDMS3660S 22CF | 全新原裝 | ||
| FDMS3660S-1 | 全新原裝 | ||
| FDMS3660S_F121 | MOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET | ||
| FDMS3664 | 全新原裝 | ||
| FDMS3669S-SN00345 | 全新原裝 |