FDMS8638

FDMS86380-F085 vs FDMS86380_F085 vs FDMS86381-F085

 
PartNumberFDMS86380-F085FDMS86380_F085FDMS86381-F085
DescriptionMOSFET 80V N Channel Power Trench MosFETNMOS PWR56 80V 13 MOHMPOWER TRENCH MOSFET
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePower-56-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance11.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation75 W--
ConfigurationSingle1 N-Channel-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height1.1 mm--
Length6 mm--
SeriesFDMS86380_F085--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandON Semiconductor / Fairchild--
Fall Time5 ns5 ns-
Product TypeMOSFET--
Rise Time8 ns8 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesFDMS86380_F085--
Unit Weight0.006095 oz--
Package Case-Power56-8-
Pd Power Dissipation-75 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-50 A-
Vds Drain Source Breakdown Voltage-80 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-30 mOhms-
Qg Gate Charge-20 nC-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS86380-F085 MOSFET 80V N Channel Power Trench MosFET
FDMS86380_F085 NMOS PWR56 80V 13 MOHM
ON Semiconductor
ON Semiconductor
FDMS86380-F085 MOSFET N-CH 80V 50A POWER56
FDMS86381-F085 POWER TRENCH MOSFET
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