 | | | |
| PartNumber | FDP047AN08A0 | FDP045N10A-F102 | FDP040N06 |
| Description | MOSFET 75V N-Ch PowerTrench | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | MOSFET PT3 Low Qg 60V, 4.0Mohm |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 100 V | 60 V |
| Id Continuous Drain Current | 80 A | 120 A | 168 A |
| Rds On Drain Source Resistance | 4 mOhms | 3.8 mOhms | 3.2 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 310 W | 263 W | 231 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 16.3 mm | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FDP047AN08A0 | FDP045N10A | FDP040N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | N-Channel Power Trench MOSFET |
| Width | 4.7 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 45 ns | 15 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 88 ns | 26 ns | 40 ns |
| Factory Pack Quantity | 800 | 800 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | - | 55 ns |
| Typical Turn On Delay Time | 18 ns | - | 30 ns |
| Part # Aliases | FDP047AN08A0_NL | FDP045N10A_F102 | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | 0.063493 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | 4.5 V |
| Qg Gate Charge | - | 57 nC | 102 nC |
| Forward Transconductance Min | - | 132 S | 169 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP047N10 | MOSFET 100V N-Channel PowerTrench | |
| FDP047N08 | MOSFET 75V N-Channel PowerTrench | ||
| FDP047AN08A0 | MOSFET 75V N-Ch PowerTrench | ||
| FDP047N08-F102 | MOSFET PT3 75V | ||
| FDP047AN08A0-F102 | MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH | ||
| FDP045N10A-F102 | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | ||
| FDP040N06 | MOSFET PT3 Low Qg 60V, 4.0Mohm | ||
| FDP045N10A_F102 | Darlington Transistors MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | ||
| FDP047AN08A0_F102 | MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH | ||
| FDP045N10 | 全新原裝 | ||
| FDP045N10AF102 | 全新原裝 | ||
| FDP047 | 全新原裝 | ||
| FDP047AN | INSTOCK | ||
| FDP047AN08 | 全新原裝 | ||
| FDP047AN08A0,FDP047AN08A | 全新原裝 | ||
| FDP047AN08A0_NB82013 | 全新原裝 | ||
| FDP047AN08A0_NL | 全新原裝 | ||
| FDP047AN08AD | 全新原裝 | ||
| FDP047AN08AO | 全新原裝 | ||
| FDP047AN08AO,FDP047AN08A | 全新原裝 | ||
| FDP047N08-FSC | 全新原裝 | ||
| FDP047N08AO | 全新原裝 | ||
| FDP047N08V | 全新原裝 | ||
| FDP047N08V_F102 | 全新原裝 | ||
| FDP047N08_F102 | PT3 75V | ||
| FDP047N08-- | 全新原裝 | ||
ON Semiconductor |
FDP047AN08A0 | MOSFET N-CH 75V 80A TO-220AB | |
| FDP040N06 | MOSFET N-CH 60V 120A TO220 | ||
| FDP045N10A | MOSFET N-CH 100V 120A TO-220-3 | ||
| FDP045N10A-F102 | MOSFET N-CH 100V 120A TO-220-3 | ||
| FDP047AN08A0-F102 | MOSFET N-CH 75V 80A TO-220AB-3 | ||
| FDP047N08 | MOSFET N-CH 75V 164A TO-220 | ||
| FDP047N08-F102 | MOSFET N-CH 75V 164A TO220-3 | ||
| FDP047N10 | MOSFET N-CH 100V 120A TO-220 |