 |  | | |
| PartNumber | FDP10N60NZ | FDP10N60 | FDP10N60/FDPF10N60C |
| Description | MOSFET 600N-Channel MOSFET UniFET-II | MOSFET,N CH,600V,10A,TO220 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 640 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 185 W | - | - |
| Configuration | Single | - | - |
| Tradename | UniFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDP10N60NZ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 14 S | - | - |
| Fall Time | 50 nS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 nS | - | - |
| Typical Turn On Delay Time | 25 nS | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP10N60NZ | MOSFET 600N-Channel MOSFET UniFET-II | |
| FDP10N60 | MOSFET,N CH,600V,10A,TO220 | ||
| FDP10N60/FDPF10N60C | 全新原裝 | ||
| FDP10N60NZ,10N60NZ, | 全新原裝 | ||
| FDP10N60ZU | 全新原裝 | ||
ON Semiconductor |
FDP10N60NZ | MOSFET N-CH 600V 10A TO-220 |