 | | | |
| PartNumber | FDS6673BZ-F085 | FDS6675 | FDS6673BZ |
| Description | MOSFET -30V P-Channel PowerTrench | MOSFET SO-8 P-CH -30V | MOSFET -30V P-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 14.5 A | 11 A | 14.5 A |
| Rds On Drain Source Resistance | 6.5 mOhms | 14 mOhms | 6.5 mOhms |
| Vgs Gate Source Voltage | 25 V | 20 V | 25 V |
| Qg Gate Charge | 88 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | - |
| Tradename | PowerTrench | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Series | FDS6673BZ_F085 | FDS6675 | FDS6673BZ |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 60 S | 32 S | 60 S |
| Fall Time | 105 ns | 100 ns | 105 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 16 ns | 16 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 225 ns | 50 ns | 225 ns |
| Typical Turn On Delay Time | 14 ns | 12 ns | 14 ns |
| Part # Aliases | FDS6673BZ_F085 | FDS6675_NL | - |
| Unit Weight | 0.008127 oz | 0.004586 oz | 0.004586 oz |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | MOSFET | MOSFET |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDS6679AZ | MOSFET -30V P-Channel PowerTrench MOSFET | |
| FDS6673BZ-F085 | MOSFET -30V P-Channel PowerTrench | ||
| FDS6679 | MOSFET SO-8 | ||
| FDS6675 | MOSFET SO-8 P-CH -30V | ||
| FDS6675BZ | MOSFET -30V P-Channel PwrTrch MOSFET | ||
| FDS6676AS | MOSFET 30V NCH POWER TRENCH MOSFET | ||
| FDS6673BZ | MOSFET -30V P-Channel PowerTrench MOSFET | ||
ON Semiconductor |
FDS6679AZ | MOSFET P-CH 30V 13A 8-SOIC | |
| FDS6673BZ | MOSFET P-CH 30V 14.5A 8-SOIC | ||
| FDS6675 | MOSFET P-CH 30V 11A 8-SOIC | ||
| FDS6675A | MOSFET P-CH 30V 11A 8SOIC | ||
| FDS6675BZ | MOSFET P-CH 30V 8-SOIC | ||
| FDS6676AS | MOSFET N-CH 30V 14.5A 8-SOIC | ||
| FDS6679 | MOSFET P-CH 30V 13A 8SOIC | ||
| FDS6673BZ-F085 | MOSFET P-CH 30V 14.5A 8-SOIC | ||
| FDS6673BZ_F085 | IGBT Transistors MOSFET -30V P-Channel PowerTrench | ||
| FDS6673AZ-NL | 全新原裝 | ||
| FDS6673BZ , 1N5256B | 全新原裝 | ||
| FDS6673BZ- | 全新原裝 | ||
| FDS6673BZ-NL | 全新原裝 | ||
| FDS6673BZA | 全新原裝 | ||
| FDS6673BZA_NL | 全新原裝 | ||
| FDS6673BZ_G | 全新原裝 | ||
| FDS6675-NL | 全新原裝 | ||
| FDS6675A-NL | 全新原裝 | ||
| FDS6675A/BZ | 全新原裝 | ||
| FDS6675A/FDS6675BZ | 全新原裝 | ||
| FDS6675AS | 全新原裝 | ||
| FDS6675BZ SOP8 | 全新原裝 | ||
| FDS6675BZ-NL | 全新原裝 | ||
| FDS6676 | MOSFET SO-8 | ||
| FDS6676-NL | 全新原裝 | ||
| FDS6676AS SOP8 | 全新原裝 | ||
| FDS6676AS-G | 全新原裝 | ||
| FDS6676AS-NL | 全新原裝 | ||
| FDS6676AS-NL (P/B) | 全新原裝 | ||
| FDS6676S | MOSFET 30V N-Ch PowerTrench | ||
| FDS6676S-NL | 全新原裝 | ||
| FDS6676S_Q | 全新原裝 | ||
| FDS6679-NL | 全新原裝 | ||
| FDS6679A | 全新原裝 | ||
| FDS6679AS | 全新原裝 | ||
| FDS6679AZ AP6679GM | 全新原裝 | ||
| FDS6676AS-NL. | 全新原裝 | ||
| FDS6676S-NL. | 全新原裝 | ||
| FDS6673BZ-CUT TAPE | 全新原裝 | ||
| FDS6675-CUT TAPE | 全新原裝 | ||
| FDS6675BZ-CUT TAPE | 全新原裝 | ||
| FDS6679-CUT TAPE | 全新原裝 | ||
| FDS6679A2 | 全新原裝 |