PartNumber | FDV304P | FDV304 | FDV304N |
Description | MOSFET P-Ch Digital | ||
Manufacturer | ON Semiconductor | FAIRCHI | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 460 mA | - | - |
Rds On Drain Source Resistance | 1.1 Ohms | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 350 mW | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.2 mm | - | - |
Length | 2.9 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | FDV304P | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Type | MOSFET | - | - |
Width | 1.3 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 0.8 S | - | - |
Fall Time | 8 ns | 8 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 55 ns | 55 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Part # Aliases | FDV304P_NL | - | - |
Unit Weight | 0.000282 oz | 0.002116 oz | - |
Part Aliases | - | FDV304P_NL | - |
Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-23 | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 350mW | - |
Drain to Source Voltage Vdss | - | 25V | - |
Input Capacitance Ciss Vds | - | 63pF @ 10V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 460mA (Ta) | - |
Rds On Max Id Vgs | - | 1.1 Ohm @ 500mA, 4.5V | - |
Vgs th Max Id | - | 1.5V @ 250μA | - |
Gate Charge Qg Vgs | - | 1.5nC @ 4.5V | - |
Pd Power Dissipation | - | 350 mW | - |
Vgs Gate Source Voltage | - | - 8 V | - |
Id Continuous Drain Current | - | 460 mA | - |
Vds Drain Source Breakdown Voltage | - | - 25 V | - |
Rds On Drain Source Resistance | - | 1.1 Ohms | - |
Forward Transconductance Min | - | 0.8 S | - |