PartNumber | FF1000R17IE4 | FF1000R17IE4BOSA1 | FF1000R17IE4DB2BOSA1 |
Description | IGBT Modules N-CH 1.7KV 1.39KA | IGBT MODULE VCES 1700V 1000A | Trans IGBT Module N-CH 1700V 1.39KA 6250000mW Tray |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 1700 V | - | - |
Collector Emitter Saturation Voltage | 2.45 V | - | - |
Continuous Collector Current at 25 C | 1390 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 6.25 kW | - | - |
Package / Case | PRIME3 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Height | 38 mm | - | - |
Length | 250 mm | - | - |
Width | 89 mm | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 2 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF1000R17IE4BOSA1 SP000609592 | - | - |
Unit Weight | 2.646 lbs | - | - |