 | | | |
| PartNumber | FF100R12KS4 | FF100R12KS4HOSA1 | FF100R12KS4 , 1N5353B |
| Description | IGBT Modules 1200V 100A DUAL | IGBT MODULE VCES 1700V 1000A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 3.2 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 780 W | - | - |
| Package / Case | 62 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF100R12KS4HOSA1 SP000100705 | - | - |
| Unit Weight | 12 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FF100R12KS4 | IGBT Modules 1200V 100A DUAL | |
| FF100R12KS4HOSA1 | IGBT MODULE VCES 1700V 1000A | ||
| FF100R12KS4 | IGBT Modules 1200V 100A DUAL | ||
| FF100R12KS4 , 1N5353B | 全新原裝 |