 | | | |
| PartNumber | FF1200R17KE3 | FF1200R17KE3-B2 | FF1200R17KE3B2NOSA1 |
| Description | IGBT Modules 1700V 1200A DUAL | IGBT MODULE 1700V 1200A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1700 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Continuous Collector Current at 25 C | 1600 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 5.95 kW | - | - |
| Package / Case | IHM130-10 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 38 mm | - | - |
| Length | 140 mm | - | - |
| Width | 130 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 2 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF1200R17KE3NOSA1 SP000100586 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FF1200R17KE3 | IGBT Modules 1700V 1200A DUAL | |
| FF1200R17KE3NOSA1 | IGBT MODULE VCES 1200V 1200A | ||
| FF1200R17KE3B2NOSA1 | IGBT MODULE 1700V 1200A | ||
| FF1200R17KE3 | IGBT Modules 1700V 1200A DUAL | ||
| FF1200R17KE3_B2 | IGBT Modules N-CH 1.7KV 1.7KA | ||
| FF1200R17KE3-B2 | 全新原裝 |