FF1400R12IP

FF1400R12IP4P vs FF1400R12IP4 vs FF1400R12IP4BOSA1

 
PartNumberFF1400R12IP4PFF1400R12IP4FF1400R12IP4BOSA1
DescriptionIGBT ModulesIGBT Modules N-CH 1.2KV 1.4KAIGBT MODULE VCES 1200V 1400A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity32-
SubcategoryIGBTsIGBTs-
Part # AliasesFF1400R12IP4PBOSA1 SP001089928FF1400R12IP4BOSA1 SP000609758-
Product-IGBT Silicon Modules-
Configuration-Dual-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2.05 V-
Continuous Collector Current at 25 C-1400 A-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-7.65 kW-
Package / Case-PRIME3-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-38 mm-
Length-250 mm-
Width-89 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
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