PartNumber | FF150R12KT3G | FF150R12KT3G , 1N5356BRL | FF150R12KT3GHOSA1 |
Description | IGBT Modules N-CH 1.2KV 225A | IGBT MODULE VCES 1200V 150A | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.15 V | - | - |
Continuous Collector Current at 25 C | 225 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 780 W | - | - |
Package / Case | 62 mm | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 125 C | - | - |
Packaging | Tray | - | - |
Height | 30.9 mm | - | - |
Length | 106.4 mm | - | - |
Width | 61.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF150R12KT3GHOSA1 SP000100788 | - | - |
Unit Weight | 12 oz | - | - |