PartNumber | FF150R12RT4 | FF150R12RT4HOSA1 | FF150R12RT4 , 1N5357B |
Description | IGBT Modules IGBT 1200V 150A | IGBT MODULE 1200V 150A | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 1.75 V | - | - |
Continuous Collector Current at 25 C | 150 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 790 W | - | - |
Package / Case | Module | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | SMD/SMT | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF150R12RT4HOSA1 SP000624908 | - | - |