FF150R12Y

FF150R12YT3 vs FF150R12YT3BOMA1 vs FF150R12YT3ENG

 
PartNumberFF150R12YT3FF150R12YT3BOMA1FF150R12YT3ENG
DescriptionIGBT Modules N-CH 1.2KV 200AIGBT MODULE VCES 1200V 150A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Continuous Collector Current at 25 C200 A--
Package / CaseEASY2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length55.9 mm--
Width45.6 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity20--
SubcategoryIGBTs--
Part # AliasesFF150R12YT3BOMA1 SP000104572--
Unit Weight12 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FF150R12YT3 IGBT Modules N-CH 1.2KV 200A
FF150R12YT3BOMA1 IGBT MODULE VCES 1200V 150A
FF150R12YT3 IGBT Modules N-CH 1.2KV 200A
FF150R12YT3ENG 全新原裝
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