FF400R33KF2

FF400R33KF2C vs FF400R33KF2 vs FF400R33KF2CNOSA1

 
PartNumberFF400R33KF2CFF400R33KF2FF400R33KF2CNOSA1
DescriptionIGBT Modules 3300V 400A DUALIGBT MODULE VCES 650V 400A
ManufacturerInfineonEUPEC-
Product CategoryIGBT ModulesModule-
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max3300 V--
Collector Emitter Saturation Voltage3.4 V--
Continuous Collector Current at 25 C660 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation4.8 kW--
Package / CaseIHM--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height38 mm--
Length140 mm--
Width130 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF400R33KF2CNOSA1 SP000100614--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FF400R33KF2C IGBT Modules 3300V 400A DUAL
FF400R33KF2CNOSA1 IGBT MODULE VCES 650V 400A
FF400R33KF2C IGBT Modules 3300V 400A DUAL
FF400R33KF2 全新原裝
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