 |  | | |
| PartNumber | FF600R06ME3 | FF600R07ME4B11BOSA1 | FF600R06ME3BOSA1 |
| Description | IGBT Modules IGBT 600V 600A | Trans IGBT Module N-CH 650V 700A 11-Pin AG-ECONOD-3 Tray | IGBT MODULE VCES 600V 600A |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.9 V | - | - |
| Continuous Collector Current at 25 C | 700 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 1650 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF600R06ME3BOSA1 SP000374489 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FF600R07ME4_B11 | IGBT Modules IGBT Module 600A 650V | |
| FF600R06ME3 | IGBT Modules IGBT 600V 600A | ||
| FF600R07ME4B11BOSA1 | Trans IGBT Module N-CH 650V 700A 11-Pin AG-ECONOD-3 Tray | ||
| FF600R06ME3BOSA1 | IGBT MODULE VCES 600V 600A | ||
| FF600R07ME4_B11 | IGBT Modules IGBT Module 600A 650V | ||
| FF600R06ME3 | Trans IGBT Module N-CH 600V 700A 11-pin ECONOD-3 (Alt: FF600R06ME3) | ||
| FF600R06ME4 | 全新原裝 | ||
| FF600R07ME4 | 全新原裝 | ||
| FF600R07ME4-B11 | 全新原裝 |