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FF650R17IE

FF650R17IE4 vs FF650R17IE4DB2BOSA1 vs FF650R17IE4BOSA1

 
PartNumberFF650R17IE4FF650R17IE4DB2BOSA1FF650R17IE4BOSA1
DescriptionIGBT Modules N-CH 1.7KV 930AIGBT MODULE VCES 1700V 650AIGBT MODULE VCES 1700V 650A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2.45 V--
Continuous Collector Current at 25 C930 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation4.15 kW--
Package / CasePRIME2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height38 mm--
Length172 mm--
Width89 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity3--
SubcategoryIGBTs--
Part # AliasesFF650R17IE4BOSA1 SP000614664--
Unit Weight1.872 lbs--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies 		FF650R17IE4V IGBT Modules
FF650R17IE4 IGBT Modules N-CH 1.7KV 930A
FF650R17IE4P IGBT Modules
FF650R17IE4DP_B2 IGBT Modules
FF650R17IE4D_B2 IGBT Modules IGBT 1700V 650A
FF650R17IE4DB2BOSA1 IGBT MODULE VCES 1700V 650A
FF650R17IE4DPB2BOSA1 IGBT MODULE VCES 1700V 650A
FF650R17IE4BOSA1 IGBT MODULE VCES 1700V 650A
FF650R17IE4PBOSA1 IGBT MODULE VCES 1700V 650A
FF650R17IE4VBOSA1 IGBT MODULE VCES 1700V 650A
FF650R17IE4D_B2 IGBT Modules IGBT 1700V 650A
FF650R17IE4 IGBT Modules N-CH 1.7KV 930A
FF650R17IE4 , 1N5383B 全新原裝
FF650R17IE4 FF600R12IP4 全新原裝
FF650R17IE4D-B2 全新原裝
FF650R17IE4V IGBT Modules
FF650R17IE4P IGBT Modules
FF650R17IE4DP_B2 IGBT Modules
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