 |  | |
| PartNumber | FGH25T120SMD-F155 | FGH25N120FTDS |
| Description | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | IGBT Transistors 1200V 25A Field Stop Trench IGBT |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247G03-3 | - |
| Mounting Style | Through Hole | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - |
| Collector Emitter Saturation Voltage | 1.9 V | - |
| Maximum Gate Emitter Voltage | 25 V | - |
| Continuous Collector Current at 25 C | 50 A | - |
| Pd Power Dissipation | 428 W | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Series | FGH25T120SMD | FGH25N120FTDS |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 25 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | 400 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | FGH25T120SMD_F155 | - |
| Unit Weight | 0.225401 oz | 0.225401 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGH25T120SMD-F155 | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | |
| FGH25N120FTDS | IGBT Transistors 1200V 25A Field Stop Trench IGBT | ||
ON Semiconductor |
FGH25N120FTDS | IGBT Transistors 1200V 25A Field Stop Trench IGBT | |
| FGH25T120SMD-F155 | IGBT 1200V 50A 428W TO247-3 | ||
| FGH25T120SMD_F155 | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | ||
| FGH25N120FTD3 | 全新原裝 | ||
| FGH25N120FTDH | 全新原裝 | ||
| FGH25T120 | 全新原裝 | ||
| FGH25T120SMD | 全新原裝 |