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| PartNumber | FGH60N60SMD-F085 |
| Description | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 |
| Manufacturer | ON Semiconductor |
| Product Category | IGBT Transistors |
| RoHS | Y |
| Technology | Si |
| Package / Case | TO-247-3 |
| Mounting Style | Through Hole |
| Configuration | Single |
| Collector Emitter Voltage VCEO Max | 600 V |
| Collector Emitter Saturation Voltage | 2.14 V |
| Maximum Gate Emitter Voltage | 20 V |
| Continuous Collector Current at 25 C | 120 A |
| Pd Power Dissipation | 600 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Series | FGH60N60SM_F085 |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Continuous Collector Current Ic Max | 60 A |
| Brand | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | 400 nA |
| Product Type | IGBT Transistors |
| Factory Pack Quantity | 450 |
| Subcategory | IGBTs |
| Part # Aliases | FGH60N60SMD_F085 |
| Unit Weight | 0.225401 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGH60N60SMD-F085 | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | |
ON Semiconductor |
FGH60N60SMD-F085 | 600V/60A FIELD STOP IGBT GEN 2 |