PartNumber | FGP15N60UNDF | FGP15N60RUFD | FGP15N60UND |
Description | IGBT Transistors 600V 15A NPT IGBT | ||
Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
Product Category | IGBT Transistors | - | IGBTs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-220-3 | - | - |
Mounting Style | Through Hole | - | Through Hole |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.7 V | - | 2.7 V |
Maximum Gate Emitter Voltage | 20 V | - | +/- 20 V |
Continuous Collector Current at 25 C | 30 A | - | 30 A |
Pd Power Dissipation | 178 W | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | FGP15N60UNDF | - | - |
Packaging | Tube | - | Tube |
Brand | ON Semiconductor / Fairchild | - | - |
Gate Emitter Leakage Current | +/- 10 uA | - | +/- 10 uA |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.063493 oz | - | 0.063493 oz |
Package Case | - | - | TO-220-3 |
Input Type | - | - | Standard |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-220-3 |
Power Max | - | - | 178W |
Reverse Recovery Time trr | - | - | 82.4ns |
Current Collector Ic Max | - | - | 30A |
Voltage Collector Emitter Breakdown Max | - | - | 600V |
IGBT Type | - | - | NPT |
Current Collector Pulsed Icm | - | - | 45A |
Vce on Max Vge Ic | - | - | 2.7V @ 15V, 15A |
Switching Energy | - | - | 370μJ (on), 67μJ (off) |
Gate Charge | - | - | 43nC |
Td on off 25°C | - | - | 9.3ns/54.8ns |
Test Condition | - | - | 400V, 15A, 10 Ohm, 15V |
Pd Power Dissipation | - | - | 178 W |
Collector Emitter Voltage VCEO Max | - | - | 600 V |