 |  | | |
| PartNumber | FGY160T65SPD-F085 | FGY160T65SPD_F085 | FGY160T65S_F085 |
| Description | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY160T65SPD-F085) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 240 A | - | - |
| Pd Power Dissipation | 882 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | FGY160T65S_F085 | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FGY160T65SPD_F085 | - | - |
| Unit Weight | 0.215171 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGY160T65SPD-F085 | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | |
ON Semiconductor |
FGY160T65SPD-F085 | 650V FS GEN3 TRENCH IGBT | |
| FGY160T65SPD_F085 | Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY160T65SPD-F085) | ||
| FGY160T65S_F085 | 全新原裝 |