FJD3

FJD3305H1TM vs FJD3076TM vs FJD3076TF

 
PartNumberFJD3305H1TMFJD3076TMFJD3076TF
DescriptionBipolar Transistors - BJT NPN Silicon TransistorTRANS NPN 32V 2A DPAKTRANS NPN 32V 2A DPAK
ManufacturerON SemiconductorFairchild SemiconductorFSC
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current4 A2 A-
Gain Bandwidth Product fT4 MHz100 MHz-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJD3305H1--
DC Current Gain hFE Max28270-
PackagingReelDigi-ReelR Alternate Packaging-
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min19--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009184 oz0.009184 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Mounting Type-Surface Mount-
Supplier Device Package-D-Pak-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-32V-
DC Current Gain hFE Min Ic Vce-130 @ 500mA, 3V-
Vce Saturation Max Ib Ic-800mV @ 200mA, 2A-
Current Collector Cutoff Max-1μA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-32 V-
Collector Base Voltage VCBO-40 V-
Emitter Base Voltage VEBO-5 V-
Continuous Collector Current-2 A-
DC Collector Base Gain hfe Min-120-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJD3305H1TM Bipolar Transistors - BJT NPN Silicon Transistor
ON Semiconductor
ON Semiconductor
FJD3076TM TRANS NPN 32V 2A DPAK
FJD3305H1TM TRANS NPN 400V 4A DPAK
FJD3076TF TRANS NPN 32V 2A DPAK
FJD3076 全新原裝
FJD3076TM-NL 全新原裝
FJD3305H1 全新原裝
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