 |  |  | |
| PartNumber | FJN4309RBU | FJN4309RTA | FJN4309-RBU |
| Description | Bipolar Transistors - Pre-Biased PNP/50V/100mA/4.7K | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Single | Single | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Continuous Collector Current | - 0.1 A | - 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 300 mW | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Bulk | Ammo Pack | - |
| DC Current Gain hFE Max | 600 | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Type | PNP Epitaxial Silicon Transistor | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.006286 oz | 0.008466 oz | - |
| Package Case | - | TO-92-3 Kinked Lead | - |
| Pd Power Dissipation | - | 0.3 W | - |
| Collector Emitter Voltage VCEO Max | - | 40 V | - |
| Emitter Base Voltage VEBO | - | - 5 V | - |
| DC Collector Base Gain hfe Min | - | 100 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJN4309RBU | Bipolar Transistors - Pre-Biased PNP/50V/100mA/4.7K | |
ON Semiconductor |
FJN4309RTA | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | |
| FJN4309RBU | TRANS PREBIAS PNP 300MW TO92-3 | ||
| FJN4309-RBU | 全新原裝 |