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| PartNumber | FJP2145TU | FJP2160DTU | FJP2145 |
| Description | Bipolar Transistors - BJT NPN ESBC/8A/800V TO-220 | TRANS NPN 800V 2A TO-220 | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 800 V | - | - |
| Collector Base Voltage VCBO | 1100 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.151 V | 250 mV | - |
| Gain Bandwidth Product fT | 15 MHz | 5 MHz | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Series | FJP2145 | - | - |
| DC Current Gain hFE Max | 40 | - | - |
| Packaging | Tube | Tube | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 5 A | 2 A | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Pd Power Dissipation | 120 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 100 W | - |
| Collector Emitter Voltage VCEO Max | - | 800 V | - |
| Collector Base Voltage VCBO | - | 1.6 kV | - |
| Emitter Base Voltage VEBO | - | 12 V | - |
| Maximum DC Collector Current | - | 2 A | - |
| DC Collector Base Gain hfe Min | - | 20 | - |
