FJX22

FJX2222ATF vs FJX2222A vs FJX2222A-NL

 
PartNumberFJX2222ATFFJX2222AFJX2222A-NL
DescriptionBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJX2222A--
DC Current Gain hFE Max300300-
Height0.9 mm--
Length2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Pd Power Dissipation325 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesFJX2222ATF_NL--
Unit Weight0.000176 oz0.001058 oz-
Part Aliases-FJX2222ATF_NL-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-323-
Power Max-325mW-
Transistor Type-NPN-
Current Collector Ic Max-600mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V-
Vce Saturation Max Ib Ic-1V @ 50mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-300MHz-
Pd Power Dissipation-325 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-75 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-100-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJX2222ATF Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor
ON Semiconductor
FJX2222ATF Bipolar Transistors - BJT NPN Epitaxial Sil
FJX2222A 全新原裝
FJX2222A-NL 全新原裝
FJX2222ATF , 1N750ARL 全新原裝
FJX2222ATF_NL 全新原裝
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