FJX2907A

FJX2907ATF vs FJX2907A vs FJX2907A-NL

 
PartNumberFJX2907ATFFJX2907AFJX2907A-NL
DescriptionBipolar Transistors - BJT PNP Epitaxial TransistorBipolar Junction Transistor, PNP Type, SOT-323
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 1.6 V- 1.6 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJX2907A--
DC Current Gain hFE Max300300-
Height0.9 mm--
Length2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 0.6 A- 0.6 A-
Pd Power Dissipation325 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz0.001058 oz-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-323-
Power Max-325mW-
Transistor Type-PNP-
Current Collector Ic Max-600mA-
Voltage Collector Emitter Breakdown Max-60V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V-
Vce Saturation Max Ib Ic-1.6V @ 50mA, 500mA-
Current Collector Cutoff Max-10nA (ICBO)-
Frequency Transition-200MHz-
Pd Power Dissipation-325 mW-
Collector Emitter Voltage VCEO Max-- 60 V-
Collector Base Voltage VCBO-- 60 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-100-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJX2907ATF Bipolar Transistors - BJT PNP Epitaxial Transistor
ON Semiconductor
ON Semiconductor
FJX2907ATF TRANS PNP 60V 0.6A SOT-323
FJX2907ATF_Q Bipolar Transistors - BJT PNP Epitaxial Transisto
FJX2907A Bipolar Junction Transistor, PNP Type, SOT-323
FJX2907A-NL 全新原裝
FJX2907ATF , 1N751A 全新原裝
FJX2907ATF_NL 全新原裝
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