FJX3014

FJX3014RTF vs FJX3014R vs FJX3014RTF , 1N816

 
PartNumberFJX3014RTFFJX3014RFJX3014RTF , 1N816
DescriptionBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Typical Resistor Ratio0.10.1-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFJX3014R--
PackagingReelReel-
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO10 V--
Height0.9 mm--
Length2 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz0.001058 oz-
Package Case-SOT-323-3-
Pd Power Dissipation-0.2 W-
Collector Emitter Voltage VCEO Max-50 V-
Emitter Base Voltage VEBO-10 V-
DC Collector Base Gain hfe Min-68-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJX3014RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
FJX3014RTF Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3014RTF_Q Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
FJX3014R 全新原裝
FJX3014RTF , 1N816 全新原裝
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