FP100R06

FP100R06KE3 vs FP100R06KE3B16BOSA1 vs FP100R06KE3BOSA1

 
PartNumberFP100R06KE3FP100R06KE3B16BOSA1FP100R06KE3BOSA1
DescriptionIGBT Modules N-CH 600V 100AIGBT MODULE VCES 600V 100A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationArray 7--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Continuous Collector Current at 25 C100 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation335 W--
Package / CaseEcono 3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP100R06KE3BOSA1 SP000091925--
Unit Weight10.582189 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FP100R06KE3 IGBT Modules N-CH 600V 100A
FP100R06KE3BOSA1 IGBT MODULE VCES 600V 100A
FP100R06KE3_B16 IGBT FP100R06KE3B16BOSA1
FP100R06KE3B16BOSA1 全新原裝
FP100R06KE3 IGBT Modules N-CH 600V 100A
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