FP10R12KE

FP10R12KE3 vs FP10R12KE3ENG vs FP10R12KE3BOMA1

 
PartNumberFP10R12KE3FP10R12KE3ENGFP10R12KE3BOMA1
DescriptionIGBT Modules ELECTRONIC COMPONENTMOD IGBT LOW PWR EASY2-1
ManufacturerInfineonEUPEC-
Product CategoryIGBT ModulesModule-
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.45 V--
Continuous Collector Current at 25 C15 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation20 mW--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity20--
SubcategoryIGBTs--
Part # AliasesFP10R12KE3BOMA1 SP000100274--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FP10R12KE3 IGBT Modules ELECTRONIC COMPONENT
FP10R12KE3BOMA1 MOD IGBT LOW PWR EASY2-1
FP10R12KE3 Trans IGBT Module N-CH 1.2KV 15A 23-Pin EASY2 (Alt: SP000100274)
FP10R12KE3ENG 全新原裝
Top