 |  | | |
| PartNumber | FP150R12KT4 | FP150R12KT4P_B11 | FP150R12KT4P |
| Description | IGBT Modules | IGBT Modules | IGBT Modules |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Hex | Hex | Hex |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 1.75 V | 1.75 V | 1.75 V |
| Continuous Collector Current at 25 C | 150 A | 150 A | 150 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Pd Power Dissipation | 20 mW | 20 mW | 20 mW |
| Package / Case | EconoPIM 3 | EconoPIM 3 | EconoPIM 3 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tray | Tray | Tray |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 10 | 6 | 6 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | FP150R12KT4BPSA1 SP001603812 | FP150R12KT4PB11BPSA1 SP001603806 | FP150R12KT4PBPSA1 SP001603798 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
FP150R12KT4 | IGBT Modules | |
| FP150R12KT4_B11 | IGBT Modules | ||
| FP150R12KT4P_B11 | IGBT Modules | ||
| FP150R12KT4P | IGBT Modules | ||
| FP150R12KE3G | 全新原裝 | ||
| FP150R12KT3G | 全新原裝 | ||
| FP150R12KT4 | Trans IGBT Module N-CH 1.2KV 150A 43-Pin (Alt: FP150R12KT4) | ||
| FP150R12KT4P_B11 | IGBT Modules | ||
| FP150R12RT4 | 全新原裝 | ||
Infineon Technologies |
FP150R12KT4PB11BPSA1 | IGBT MODULE 1200V 150A | |
| FP150R12KT4B11BPSA1 | IGBT MODULE 1200V 150A | ||
| FP150R12KT4BPSA1 | Trans IGBT Module N-CH 1200V 150A Tray | ||
| FP150R12KT4PBPSA1 | IGBT MODULE 1200V 150A |