FP25R12KE

FP25R12KE3 vs FP25R12KE3BOSA1 vs FP25R12KE3N

 
PartNumberFP25R12KE3FP25R12KE3BOSA1FP25R12KE3N
DescriptionIGBT Modules 1200V 25A PIMIGBT MODULE 1200V 25A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C40 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation150 W--
Package / CaseEconoPIM2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP25R12KE3BOSA1 SP000100411--
Unit Weight6.349313 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FP25R12KE3 IGBT Modules 1200V 25A PIM
FP25R12KE3BOSA1 IGBT MODULE 1200V 25A
FP25R12KE3N 全新原裝
FP25R12KE3NEW 全新原裝
FP25R12KE3 IGBT Modules 1200V 25A PIM
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