PartNumber | FPF2C110BI07AS2 | FPF2C8P2NL07A | FPF2C8P2BF12AS |
Description | Discrete Semiconductor Modules High Power Module | IGBT Modules PIM F2 NPC 650V 50A | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Discrete Semiconductor Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Series | FPF2C110BI07AS2 | FPF2C8P2NL07A | - |
Packaging | Tray | Tray | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Product Type | Discrete Semiconductor Modules | IGBT Modules | - |
Factory Pack Quantity | 70 | 70 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Unit Weight | 1.587328 oz | 1.587328 oz | - |
Product | - | IGBT Silicon Modules | - |
Configuration | - | 3-Phase | - |
Collector Emitter Voltage VCEO Max | - | 650 V | - |
Collector Emitter Saturation Voltage | - | 2.13 V, 2.49 V | - |
Continuous Collector Current at 25 C | - | 30 A, 50 A | - |
Gate Emitter Leakage Current | - | 2 uA, 2 uA | - |
Pd Power Dissipation | - | 135 W, 174 W | - |
Package / Case | - | F2 | - |
Minimum Operating Temperature | - | - 40 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Mounting Style | - | Through Hole | - |
Maximum Gate Emitter Voltage | - | 20 V | - |
Tradename | - | STEALTH | - |