FQA13N8 stock, FQA13N8, FQA13N80-F109


PartNumber	FQA13N80-F109	FQA13N80
Description	MOSFET TO-3P N-CH 600V	MOSFET TO-3P N-CH 600V
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-3PN-3	TO-3PN-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	800 V
Id Continuous Drain Current	12.6 A	12.6 A
Rds On Drain Source Resistance	750 mOhms	750 mOhms
Vgs Gate Source Voltage	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	300 W	300 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	QFET	-
Packaging	Tube	Tube
Height	20.1 mm	20.1 mm
Length	16.2 mm	16.2 mm
Series	FQA13N80_F109	-
Transistor Type	1 N-Channel	1 N-Channel
Width	5 mm	5 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Fall Time	110 ns	110 ns
Product Type	MOSFET	MOSFET
Rise Time	150 ns	150 ns
Factory Pack Quantity	450	30
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	155 ns	155 ns
Typical Turn On Delay Time	60 ns	60 ns
Part # Aliases	FQA13N80_F109	FQA13N80_NL
Unit Weight	0.225789 oz	0.000198 oz
Type	-	MOSFET
Forward Transconductance Min	-	13 S

Search Part Number : "FQA13N8", Match & Start with "FQA13N8" - Total : 10

製造商	型號	描述
ON Semiconductor / Fairchild	FQA13N80-F109	MOSFET TO-3P N-CH 600V
ON Semiconductor / Fairchild	FQA13N80	MOSFET TO-3P N-CH 600V
ON Semiconductor	FQA13N80	MOSFET N-CH 800V 12.6A TO-3P
ON Semiconductor	FQA13N80-F109	MOSFET N-CH 800V 12.6A TO-3P
	FQA13N80 F109	全新原裝
	FQA13N80,13N80,	全新原裝
	FQA13N80C	全新原裝
	FQA13N80Q	全新原裝
	FQA13N80_F109	Darlington Transistors MOSFET TO-3P N-CH 600V
	FQA13N80--	全新原裝

FQA13N8