 |  | | |
| PartNumber | FQB2N60TM | FQB28N30 | FQB2P25 |
| Description | MOSFET 600V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | FSC |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | TO-263-3, DPak (2 Leads + Tab), TO-263AB |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2.4 A | - | - |
| Rds On Drain Source Resistance | 4.7 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | Tape & Reel (TR) |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| Series | - | - | QFET |
| Part Status | - | - | Obsolete |
| FET Type | - | - | P-Channel |
| Drain to Source Voltage (Vdss) | - | - | 250V |
| Current Continuous Drain (Id) @ 25°C | - | - | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 8.5nC @ 10V |
| Vgs (Max) | - | - | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 250pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 3.13W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 4 Ohm @ 1.15A, 10V |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DPAK (TO-263AB) |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB2P40TM | MOSFET 400V P-Channel QFET | |
| FQB2N60TM | MOSFET 600V N-Channel QFET | ||
| FQB28N30 | 全新原裝 | ||
| FQB2P25 | 全新原裝 | ||
| FQB2N100 | 全新原裝 | ||
| FQB2N30 | 全新原裝 | ||
| FQB2N50 | 全新原裝 | ||
| FQB2N50TM-NL | 全新原裝 | ||
| FQB2N60 | 全新原裝 | ||
| FQB2N60TM-NL | 全新原裝 | ||
| FQB2N80 | 全新原裝 | ||
| FQB2N80TM-NL | 全新原裝 | ||
| FQB2N90 | 全新原裝 | ||
| FQB2N90TM-NL | 全新原裝 | ||
| FQB2NA90 | 全新原裝 | ||
| FQB2NA90TM-NL | 全新原裝 | ||
| FQB2NA90TMFSC | 全新原裝 | ||
| FQB2P25TM-NL | 全新原裝 | ||
| FQB2P40 | 全新原裝 | ||
ON Semiconductor |
FQB2N50TM | MOSFET N-CH 500V 2.1A D2PAK | |
| FQB2N60TM | MOSFET N-CH 600V 2.4A D2PAK | ||
| FQB2N80TM | MOSFET N-CH 800V 2.4A D2PAK | ||
| FQB2N90TM | MOSFET N-CH 900V 2.2A D2PAK | ||
| FQB2NA90TM | MOSFET N-CH 900V 2.8A D2PAK | ||
| FQB2P25TM | MOSFET P-CH 250V 2.3A D2PAK | ||
| FQB2P40TM | MOSFET P-CH 400V 2A D2PAK | ||
| FQB2N30TM | MOSFET N-CH 300V 2.1A D2PAK |