 |  | | |
| PartNumber | FQB32N20C | FQB32N20CTM | FQB32N20CTM-NL |
| Description | MOSFET N-CH 200V 28A D2PAK | ||
| Manufacturer | - | FAIRCHILD | - |
| Product Category | - | FETs - Single | - |
| Series | - | QFET | - |
| Packaging | - | Tape & Reel (TR) | - |
| Part Status | - | Obsolete | - |
| FET Type | - | N-Channel | - |
| Technology | - | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | - | 200V | - |
| Current Continuous Drain (Id) @ 25°C | - | 28A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
| Vgs(th) (Max) @ Id | - | 4V @ 250A | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 110nC @ 10V | - |
| Vgs (Max) | - | ±30V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 2220pF @ 25V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 3.13W (Ta), 156W (Tc) | - |
| Rds On (Max) @ Id, Vgs | - | 82 mOhm @ 14A, 10V | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | DPAK (TO-263AB) | - |
| Package / Case | - | TO-263-3, DPak (2 Leads + Tab), TO-263AB | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| FQB32N20C | 全新原裝 | ||
| FQB32N20CTM-NL | 全新原裝 | ||
ON Semiconductor |
FQB32N20CTM | MOSFET N-CH 200V 28A D2PAK |