FQB34N20T

FQB34N20TM-AM002 vs FQB34N20TM vs FQB34N20TM AM002

 
PartNumberFQB34N20TM-AM002FQB34N20TMFQB34N20TM AM002
DescriptionMOSFET 200V N-Channel QFETPower Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current31 A--
Rds On Drain Source Resistance57 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB34N20--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time115 ns--
Product TypeMOSFET--
Rise Time280 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time125 ns--
Typical Turn On Delay Time40 ns--
Part # AliasesFQB34N20TM_AM002--
Unit Weight0.046296 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB34N20TM-AM002 MOSFET 200V N-Channel QFET
FQB34N20TM Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB34N20TM AM002 全新原裝
FQB34N20TM-NL 全新原裝
FQB34N20TM_AM002 Darlington Transistors MOSFET 200V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQB34N20TM-AM002 MOSFET N-CH 200V 31A D2PAK
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