FQB50N06T

FQB50N06TM vs FQB50N06T vs FQB50N06TM-NL

 
PartNumberFQB50N06TMFQB50N06TFQB50N06TM-NL
DescriptionMOSFET 60V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance22 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB50N06--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min22 S--
Fall Time65 ns--
Product TypeMOSFET--
Rise Time105 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesFQB50N06TM_NL--
Unit Weight0.045856 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB50N06TM MOSFET 60V N-Channel QFET
FQB50N06T 全新原裝
FQB50N06TM-NL 全新原裝
ON Semiconductor
ON Semiconductor
FQB50N06TM MOSFET N-CH 60V 50A D2PAK
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