 | | |
| PartNumber | FQB7P20TM | FQB7P20TM-F085 |
| Description | MOSFET 200V P-Channel QFET | MOSFET 200V P-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 7.3 A | 7.3 A |
| Rds On Drain Source Resistance | 690 mOhms | 690 mOhms |
| Vgs Gate Source Voltage | 30 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.13 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQB7P20 | QFET |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | - |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 4.4 S | - |
| Fall Time | 42 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 110 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Unit Weight | 0.046296 oz | 0.046296 oz |
| Part # Aliases | - | FQB7P20TM_F085 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB7P20TM | MOSFET 200V P-Channel QFET | |
| FQB7P20TM-F085 | MOSFET 200V P-Channel QFET | ||
ON Semiconductor |
FQB7P20TM | MOSFET P-CH 200V 7.3A D2PAK | |
| FQB7P20TM-F085 | MOSFET P-CH 200V 7.3A D2PAK | ||
| FQB7P20TM-NL | 全新原裝 | ||
| FQB7P20TM_F085 | IGBT Transistors MOSFET 200V P-Channel QFET | ||
| FQB7P20TM-F085P | - Tape and Reel (Alt: FQB7P20TM-F085P) |