FQD2N30T

FQD2N30TM vs FQD2N30TF vs FQD2N30TM-NL

 
PartNumberFQD2N30TMFQD2N30TFFQD2N30TM-NL
DescriptionMOSFET N-CH/300V/1.66A/3.7OHM
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance3.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min0.97 S--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5.5 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N30TM MOSFET N-CH/300V/1.66A/3.7OHM
FQD2N30TF 全新原裝
FQD2N30TM-NL 全新原裝
ON Semiconductor
ON Semiconductor
FQD2N30TM MOSFET N-CH 300V 1.7A DPAK
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